G150N50W4B


Stock Availability: 2,647

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: TTM Technologies
Mfg #: G150N50W4B
Richardson RFPD #: G150N50W4B
Description: RF Termination
Min/Mult: 1
Datasheet G150N50W4B Data Sheet
EDA/CAD Models

The G150N50W4B is high performance Aluminum Nitride (AlN) flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators, and for use in power combiners. The termination is also RoHS compliant!

Key Attributes Value Search Similar
Type Flange Mount
Resistive Element Thick Film
Substrate AlN
Resistance (Ω) 50
Power (W) 150
Dimensions (in/mm) 0.375 in L x 0.25 in W x 0.134 in T
Maximum Frequency (GHz) 2.5
VSWR (-:1) 1.22

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1:  $2.9000