GS-065-008-1-L-TR

The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology cell layout for high-current die performance and yield. The GS-065-008-1-L is a bottom-side cooled transistor in a 5x6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching.

• Ultra-low FOM Island Technology Die
• Small 5x6 mm PDFN package
• Easy gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V/+10 V)
• Very high switching frequency (> 20 MHz)
• Fast and controllable fall and rise times
• Source Sensepad for optimized gate drive
• Reverse current capability
• Zero reverse recovery loss
• RoHS 6 compliant

• Power adaptors
• LED lighting drivers
• Fast battery charging
• LLC converters
• Power Factor Correction
• Appliance motor drives
• Wireless power transfer
• Industrial power supplies