GS-065-011-2-L-MR

The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

• 650 V enhancement mode power transistor
• Bottom-cooled 8x8 mm PDFN package
• RDS(on) = 150 mOhm
• IDS(max) = 11 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant

• Consumer and Industrial Power Supplies
• Power Adapters
• LED Lighting Drivers
• Fast Battery Charging
• Power Factor Correction
• Appliance and Industrial Motor Drives
• Wireless Power Transfer