GS-065-030-2-L-MR

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GS-065-030-2-L-MR
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: GS-065-030-2-L-MR
Richardson RFPD #: GS-065-030-2-L-MR
Description: GaN Power Transistor
Min/Mult: 1
EDA/CAD Models

650 V E-mode GaN on Silicon bottom side cooled power transistor that offers very low junction to case thermal resistance for demanding high power applications and very high efficiency power switching.

Features
  • 650 V enhancement mode power transistor
  • Bottom cooled, small 8 x 8 mm PDFN package
  • RDS(on) = 50 mOhm
  • IDS(max) = 30 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive ( 20/+10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Source Sense (SS) pin for optimized gate drive
  • Reverse conduction capability
  • Zero reverse recovery loss
  • RoHS 3 (6+4) compliant
Applications
  • Bridgeless Totem Pole PFC
  • Consumer, Industrial and Datacenter High Density Power Supply
  • High Power Adapters
  • LED Lighting Drivers
  • Appliance and Industrial Motor Drives
  • Solar Inverter
  • Uninterruptable Power Supplies
  • Laser Drivers
  • Wireless Power Transfer

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 30
Rds(on) (mΩ) 50
Package Type Mini Reel
Dimensions (mm) 8 mm x 8 mm

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