GS-065-060-3-B-MR
Stock Availability: 0
| Manufacturer: | |
|---|---|
| Mfg #: | GS-065-060-3-B-MR |
| Richardson RFPD #: | GS-065-060-3-B-MR |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| EDA/CAD Models |
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650V Enhancement Mode GaN Transistor
The GS-065-060-3-B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-3-B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- 650 V enhancement mode power transistor
- Bottom-cooled, low inductance GaNPX package
- RDS(on) = 25 mOhm
- IDS(max) = 60 A
- Simple gate drive Requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 11 x 9 mm2 footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
- AC-DC Converters
- DC-DC Converters
- Bridgeless Totem Pole PFC
- Solar Inverters
- Energy Storage Systems
- On Board Chargers
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Laser Drivers
- Traction Drive
- Wireless Power Transfer
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