GS-065-080-1-D2-E01

The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. These features combine to provide very high efficiency power switching.

• Ultra-low FOM Island Technology® die
• Easy gate drive requirements
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 6.6 x 5.6 mm PCB footprint
• RoHS 6 compliant
• Dual gate drive for optimized layout and paralleling

• High efficiency power conversion
• High density power conversion
• AC-DC Converters
• On Board Battery Chargers
• Traction Drive
• Bridgeless Totem Pole PFC
• ZVS Phase Shifted Full Bridge
• Half Bridge topologies
• Synchronous Buck or Boost
• Uninterruptable Power Supplies
• Industrial Motor Drives
• Single and 3 phase inverter legs
• Solar Power
• Fast Battery Charging
• DC-DC converter
• Energy Storage Systems