GS66516B-MR

Similar product you may be interested in - GS-065-060-3-B (650V, 60A, 25mOhm E-HEMT). A pin-to-pin replacement and a more cost-effective next generation design.

The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology^® cell layout for high-current die performance & yield. GaNPX^® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.