GS-EVB-IMS3-66508B-GS


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: GS-EVB-IMS3-66508B-GS
Richardson RFPD #: GSEVBIMS366508B
Description: GaN Power Transistor Test/Evaluation Product
Min/Mult: 1
Datasheet GSEVBIMS366508B Data Sheet
EDA/CAD Models

This horizontal Insulated Metal Substrate (IMS3) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX bottom-side cooled E-modes in high power applications. The optimized thermal and electrical designs provide an excellent reference for implementing a low cost, high performance design.

Features and Benefits
  • Improved heat transfer
  • Increased power density
  • Reduced system cost
  • High thermal conductivity (7.0 W/mK)
  • IMS3 half bridge power boards are available in 2 power levels: 3 kW and 6 kW.
Applications
  • Automotive: 3.3kW-22kW on board charger, DC/DC, 3-phase inverter, high power wireless charger
  • Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD
  • Server/Datacenter: 3kW Server ACDC power supply.
  • Consumer: Residential Energy Storage System (ESS)

Key Attributes Value Search Similar
Description High Power IMS3 Evaluation Platform

Datasheets

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