GS-EVM-HB-650V150A-SP1

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GSEVMHB650V150A
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: GS-EVM-HB-650V150A-SP1
Richardson RFPD #: GSEVMHB650V150A
Description: GaN Power Transistor Test/Evaluation Product
Min/Mult: 1
Datasheet GSEVMHB650V150A Data Sheet
EDA/CAD Models

650V 150A Half-Bridge Intelligent Power Module with Integrated Gate Drive

This 650V 150A GaN E-mode IPM provides ultra-low ESW (switching losses), integrated gate drive, ultra-small system form factor, and low RDS(on). The module is designed for high-efficiency high switching frequency applications such as PV Inverters, energy storage systems, UPS, VFD and other general-purpose use.

Features and Benefits
  • Includes 2 GS-065-150-1-D (650V 150A E-mode Die)
  • Isolated, integrated gate drive
  • Ultra low 0.2 C/W RJUNC_PLATE
  • Low RDS(on) and low switching losses (ESW)
  • Industry-standard case with Press-Fit Pins
Applications
  • PV Inverters
  • Energy storage systems
  • UPS
  • VFD
  • EV Chargers

Key Attributes Value Search Similar
Description 150A Half-Bridge IPM

Datasheets

  gs-evm-hb-650v150a-sp1-technical-manual-rev-201013

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