GTRA184602FC-V1-R0

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GTRA184602FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRA184602FC-V1-R0
Richardson RFPD #: GTRA184602FC-V1
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet GTRA184602FC-V1 Data Sheet
EDA/CAD Models

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1805
Maximum Frequency (MHz) 1880
Pout (W) 80
Gain (dB) 15.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 460
Thermal Resistance (°C/W) 2
Package Name H-37248C-4
Package Type Ceramic Flangeless

Datasheets

  gtra184602fc

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1:  $179.8700


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