GTRA364002FC-V1-R0

Stock Availability: 12

GTRA364002FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRA364002FC-V1-R0
Richardson RFPD #: GTRA364002FC-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTRA364002FC-V1 Data Sheet
EDA/CAD Models

The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3400
Maximum Frequency (MHz) 3600
Pout (W) 50
Gain (dB) 13
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 40
P1dB (W)
Psat (W) 400
Thermal Resistance (°C/W) 1.55
Package Name H-37248C-4
Package Type Ceramic Flangeless

Datasheets

  gtra364002fc

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Stock: 12 Units

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