GTRB097152FC-V1-R0

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GTRB097152FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRB097152FC-V1-R0
Richardson RFPD #: GTRB097152FC-V1
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet GTRB097152FC-V1 Data Sheet
EDA/CAD Models

The GTRB097152FC-V1 is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 758
Maximum Frequency (MHz) 960
Pout (W)
Gain (dB)
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%)
P1dB (W)
Psat (W) 900
Thermal Resistance (°C/W)
Package Name H-37248C-4
Package Type Ceramic Flangeless

Datasheets

  gtrb097152fc

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