GTRB264318FC-V1-R0

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GTRB264318FC-V1-R0 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: GTRB264318FC-V1-R0
Richardson RFPD #: GTRB264318FC-V1-R0
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTRB264318FC-V1-R0 Data Sheet
EDA/CAD Models

The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2500
Maximum Frequency (MHz) 2700
Pout (W) 44
Gain (dB) 14
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 50
P1dB (W)
Psat (W) 400
Thermal Resistance (°C/W)
Package Name
Package Type Ceramic Flangeless

Datasheets

  gtrb264318fc

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