GTRB267008FC-V1-R0

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GTRB267008FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRB267008FC-V1-R0
Richardson RFPD #: GTRB267008FC-V1
Description: RF Power Transistor
Min/Mult: 1
EDA/CAD Models

The GTRB267008FC-V1 is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496 MHz to 2690 MHz operating frequency band and a thermally-enhanced packaged with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2496
Maximum Frequency (MHz) 2690
Pout (W)
Gain (dB)
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%)
P1dB (W)
Psat (W) 620
Thermal Resistance (°C/W)
Package Name H-37248KC-6/2
Package Type Ceramic Flangeless

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