GTRB384608FC-V1-R0

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GTRB384608FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRB384608FC-V1-R0
Richardson RFPD #: GTRB384608FC-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTRB384608FC-V1 Data Sheet
EDA/CAD Models

The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the GTRB384608FC-V1 provides 47.5dB Avg, 56.4 dBm peak power in 5G band 278.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3300
Maximum Frequency (MHz) 3800
Pout (W) 56
Gain (dB)
Supply Voltage (V) 48
50 Ohm Matching
Test signal W-CDMA
Pulse Width
Duty Cycle
Efficiency (%)
P1dB (W)
Psat (W) 440
Thermal Resistance (°C/W)
Package Name H-37248KC-6/2
Package Type Ceramic Flangeless

Datasheets

  gtrb384608fc

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