GTVA101K42EV-V1-R0

Stock Availability: 14

GTVA101K42EV-V1 MACOM Technology Solutions
Enlarge
Manufacturer: MACOM Technology Solutions
Mfg #: GTVA101K42EV-V1-R0
Richardson RFPD #: GTVA101K42EV-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTVA101K42EV-V1 Data Sheet
EDA/CAD Models

The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, high efficiency device in a thermally-enhanced package with bolt-down flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 1400
Gain (dB) 17
Supply Voltage (V) 50
50 Ohm Matching Input
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 68
P1dB (W)
Psat (W) 1400
Thermal Resistance (°C/W) 0.16
Package Name H-36725-4
Package Type Ceramic Flanged

Datasheets

  gtva101k42ev

Stock

 Ready for Immediate Shipment
Stock: 14 Units

Order

 Pricing in (USD)
Unit Price:
1:  $2,449.9400
5:  Get Quote