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GTVA126001EC-V1-R0

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GTVA126001EC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTVA126001EC-V1-R0
Richardson RFPD #: GTVA126001EC-V1
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet GTVA126001EC-V1 Data Sheet
EDA/CAD Models

GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 1400
Pout (W) 600
Gain (dB) 20
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 300
Duty Cycle 10
Efficiency (%) 63
P1dB (W)
Psat (W) 600
Thermal Resistance (°C/W) 0.86
Package Name H-36248-2
Package Type Ceramic Flanged

Datasheets

  gtva126001ecfc

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1:  $846.7900


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