GTVA261701FA-V1-R0

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GTVA261701FA-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTVA261701FA-V1-R0
Richardson RFPD #: GTVA261701FA-V1
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet GTVA261701FA-V1 Data Sheet
EDA/CAD Models

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2620
Maximum Frequency (MHz) 2690
Pout (W) 40
Gain (dB) 17
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 43
P1dB (W)
Psat (W) 170
Thermal Resistance (°C/W) 1.07
Package Name H-37265J-2
Package Type Ceramic Flangeless

Datasheets

  gtva261701fa

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