HMC1126ACEZ-R7


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Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC1126ACEZ-R7
Richardson RFPD #: HMC1126ACEZ-R7
Description: RF & MW Power Amplifier
Min/Mult: 100/1
Datasheet HMC1126ACEZ-R7 Data Sheet
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The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.

The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 400
Maximum Frequency (MHz) 52000
Gain (dB) 12
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 5
P1dB (dBm) 17.5
Psat (W) 0.126
PAvg (W)
Package Type LGA_CAV

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