HMC8205BF10


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC8205BF10
Richardson RFPD #: HMC8205BF10
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet HMC8205BF10 Data Sheet
EDA/CAD Models

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 300 MHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.

The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.

The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).

A high power RF Amplifier module with this device is available:

1219


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 300
Maximum Frequency (MHz) 6000
Gain (dB) 28
Gain Flatness (dB) 2
Efficiency (%) 35
Supply Voltage (V) 50
P1dB (dBm)
Psat (W) 39.81
PAvg (W)
Package Type LDCC

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Unit Price:
1:  $813.8700
10:  $793.2600
25:  $783.3500


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