HMC8410LP2FE


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC8410LP2FE
Richardson RFPD #: HMC8410LP2FE
Description: RF & MW LNA
Min/Mult: 1
Datasheet HMC8410LP2FE Data Sheet
EDA/CAD Models

The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.

The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.

The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 10
Maximum Frequency (MHz) 10000
Gain (dB) 19.5
Gain Flatness (dB)
Noise Figure (dB) 1.1
P1dB (dBm) 21
Output IP3 (dBm) 33
Phase Noise @ offset (dBc/Hz) -156 at 10 kHz
Supply Voltage (V) 5
Current (mA) 65
Package Type LFCSP

Datasheets

  HMC8410

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Unit Price:
1:  $48.2900
10:  $46.9100
15:  $46.9100


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