HMC8410LP2FETR
Stock Availability: 0
| Manufacturer: | Analog Devices, Inc. (ADI) |
|---|---|
| Mfg #: | HMC8410LP2FETR |
| Richardson RFPD #: | HMC8410LP2FETR |
| Description: | RF & MW LNA |
| Min/Mult: | 500/500 |
| Datasheet |
HMC8410LP2FETR 
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| EDA/CAD Models |
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The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.
The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.
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