HMC8412LP2FE


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC8412LP2FE
Richardson RFPD #: HMC8412LP2FE
Description: RF & MW LNA
Min/Mult: 11/1
Datasheet HMC8412LP2FE Data Sheet
EDA/CAD Models

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.

The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, in phase and quadrature (I/Q) or image rejection mixers.

The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.

The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 400
Maximum Frequency (MHz) 11000
Gain (dB) 15
Gain Flatness (dB)
Noise Figure (dB) 1.5
P1dB (dBm) 18
Output IP3 (dBm) 33
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 5
Current (mA) 60
Package Type LFCSP

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  HMC8412

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Unit Price:
11:  $61.1000
25:  $58.5900
100:  $57.0300
500:  $55.5400
1000:  $54.8400


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