HMC8412TCPZ-EP-R7

The HMC8412TCPZ-EP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband amplifier that operates from 0.4 GHz to 11 GHz.

The HMC8412TCPZ-EP provides a typical gain of ≤15.5 dB, a typical 1.4 dB noise figure at 0.4 GHz to 3 GHz, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The typical saturated output power (PSAT) of ≤20.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.

The HMC8412TCPZ-EP also features inputs and outputs that are internally matched to 50 Ohm, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412TCPZ-EP is housed in an RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP.