HMC8413LP2FETR


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Analog Devices, Inc. (ADI)
Mfg #: HMC8413LP2FETR
Richardson RFPD #: HMC8413LP2FETR
Description: RF & MW LNA
Min/Mult: 500/1
Datasheet HMC8413LP2FETR Data Sheet
EDA/CAD Models

The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.

The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB typical noise figure, and a typical output third-order intercept (OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22 dBm typical at 0.01 GHz to 7 GHz enables the low noise amplifier to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or image rejection mixers.

The HMC8413 is housed in an RoHS-compliant, 2 mm x 2 mm, 6-lead LFCSP.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 10
Maximum Frequency (MHz) 9000
Gain (dB) 19.5
Gain Flatness (dB)
Noise Figure (dB) 1.9
P1dB (dBm) 21.5
Output IP3 (dBm) 35
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 5
Current (mA) 95
Package Type LFCSP

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  HMC8413

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500:  $68.2400
1000:  $67.3600


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