ICP2637P-1-351I


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: ICP2637P-1-351I
Richardson RFPD #: ICP2637P-1-351I
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet ICP2637P-1-351I Data Sheet
EDA/CAD Models

The ICP2637 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50ohms on the RF input and output ports. The operating frequency provides flexible operation for a variety of applications including satellite and 5G. The ICP2637P is 100% DC and RF tested on-wafer to ensure compliance with electrical specifications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 23000
Maximum Frequency (MHz) 31000
Gain (dB) 23
Gain Flatness (dB)
Efficiency (%) 25
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 5
PAvg (W)
Package Type Die

Datasheets

  ICP2637

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