ICPB1005-1-110I

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ICPB1005-1-110I Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: ICPB1005-1-110I
Richardson RFPD #: ICPB1005-1-110I
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet ICPB1005-1-110I Data Sheet
EDA/CAD Models

The ICPB1005 is fabricated using GaN on SiC technology with an optimized field plate to deliver highest efficiency and power from DC to 14 GHz.

The ICPB1005 provides in excess of 35 Watts of saturated output power up to 10GHz. At 6GHz the maximum power added efficiency is over 70% making the ICPB1005 suitable for very high efficiency applications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 14000
Pout (W) 25
Gain (dB) 14.7
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70.2
P1dB (W)
Psat (W) 25
Thermal Resistance (°C/W)
Package Name
Package Type Die

Datasheets

  ICPB1005

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Mfg. Stock: 2,960 Units

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 Pricing in (USD)
Unit Price:
10:  $83.3300
100:  $81.0800
500:  $78.9500


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