INN030FQ015A
Stock Availability: 500
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN030FQ015A |
| Richardson RFPD #: | INN030FQ015A |
| Description: | GaN Power Transistor |
| Min/Mult: | 2,500/1 |
| Datasheet |
INN030FQ015A 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Zero reverse recovery charge
Applications
- High frequency DC-DC converter
- Battery charger
- Battery management system
- Notebook
- Industry
Datasheets