INN040FQ012A
Stock Availability: 500
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN040FQ012A |
| Richardson RFPD #: | INN040FQ012A |
| Description: | GaN Power Transistor |
| Min/Mult: | 2,500/1 |
| Datasheet |
INN040FQ012A 
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| EDA/CAD Models |
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Currently not available for sale in the U.S.
Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 6 mm x 4 mm package size.
Features
- Bi-directional blocking capability
- GaN-on-Silicon E-mode HEMT technology
- Ultra-low on resistance
Applications
- High side load switch
- OVP protection in USB port
- Switch circuits in multiple power suppliers system
Datasheets