Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3 mm x 4 mm
package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small footprint
Applications
- High frequency DC-DC converter
- Point of Load
- RF envelope tracking
- PC charger
- Mobile power bank
- Motor driver
