Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3 mm x 4 mm package size
Features
- AEC-Q101 Qualified
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Very small footprint
Applications
- High frequency DC-DC converter
- Point of Load
- RF envelope tracking
- USB charger
- Mobile power bank
- Motor driver
