INN040LA015A

Stock Availability: 455

INN040LA015A-B Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN040LA015A
Richardson RFPD #: INN040LA015A-B
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN040LA015A-B Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCLGA with 5 mm x 4 mm package size.

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Zero reverse recovery charge

Applications

  • Battery Charger
  • Battery Management System
  • Notebook
  • Industry

Key Attributes Value Search Similar
Voltage (V) 40
Current (A) 25
Rds(on) (mΩ) 1.2
Package Type FCLGA
Dimensions (mm) 5 mm x 4 mm

Datasheets

  INN040LA015A

Stock

 Ready for Immediate Shipment
Stock: 455 Units

Order

 Pricing in (USD)
Unit Price:
1:  $7.1700
10:  $6.9200
25:  $6.5700
100:  $2.8400
250:  $2.5800
500:  $2.3700