INN100FQ016A
Stock Availability: 490
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN100FQ016A |
| Richardson RFPD #: | INN100FQ016A |
| Description: | GaN Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
INN100FQ016A 
|
| EDA/CAD Models |
|
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size
Features
- GaN-on-Silicon E-mode HEMT technology
- Very low gate charge
- Ultra-low on resistance
- Very small footprint
Applications
- High frequency DC-DC converter
- Point of Load
- RF envelope tracking
- PC charger
- Mobile power bank
- Motor driver
Datasheets