INN100FQ016A

Stock Availability: 0

INN100FQ016A Innoscience
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN100FQ016A
Richardson RFPD #: INN100FQ016A
Description: GaN Power Transistor
Min/Mult: 2,500/1
Datasheet INN100FQ016A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small footprint

Applications

  • High frequency DC-DC converter
  • Point of Load
  • RF envelope tracking
  • PC charger
  • Mobile power bank
  • Motor driver

Key Attributes Value Search Similar
Voltage (V) 100
Current (A) 100
Rds(on) (mΩ) 1.4
Package Type FCQFN
Dimensions (mm) 4 mm x 6 mm

Datasheets

  INN100FQ016A

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
2500:  $2.6700
10000:  Get Quote


Please notify me when stock becomes available!