INN100FQ025A

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INN100FQ025A Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN100FQ025A
Richardson RFPD #: INN100FQ025A
Description: GaN Power Transistor
Min/Mult: 2,500/1
Datasheet INN100FQ025A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 3.0 mm x 5.0 mm package size

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small footprint

Applications

  • High Frequency DC-DC converter
  • BMS protection
  • RF envelope tracking
  • PC charger
  • Mobile power bank
  • Motor driver

Key Attributes Value Search Similar
Voltage (V) 100
Current (A) 80
Rds(on) (mΩ) 2.2
Package Type FCQFN
Dimensions (mm) 3 mm x 5 mm

Datasheets

  INN100FQ025A

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