INN100W027A

Stock Availability: 500

INN100W027A Innoscience
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN100W027A
Richardson RFPD #: INN100W027A
Description: GaN Power Transistor
Min/Mult: 1,500/1
Datasheet INN100W027A Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in WLCSP with 3.5 mm x 2.13 mm package size.

Features

  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small package size
  • Zero reverse recovery charge

Applications

  • Synchronous rectification
  • Class-D audio
  • High frequency DC-DC converter
  • Communication base station
  • Motor Driver

Key Attributes Value Search Similar
Voltage (V) 100
Current (A) 64
Rds(on) (mΩ) 2.1
Package Type WLCSP
Dimensions (mm) 4.45 mm x 2.3 mm

Datasheets

  INN100W027A

Stock

 Ready for Immediate Shipment
Stock: 500 Units

Quote Required