INN650D080BS

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INN650D080BS Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN650D080BS
Richardson RFPD #: INN650D080BS
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN650D080BS Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • AC-DC converters
  • DC-DC converters
  • BCM/DCM totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 30
Rds(on) (mΩ) 60
Package Type DFN
Dimensions (mm) 8 mm x 8 mm

Datasheets

  INN650D080BS

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