INN650D080BS
Stock Availability: 530
| Manufacturer: | Innoscience |
|---|---|
| Mfg #: | INN650D080BS |
| Richardson RFPD #: | INN650D080BS |
| Description: | GaN Power Transistor |
| Datasheet |
INN650D080BS 
|
| EDA/CAD Models |
|
Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany.
Currently not available for sale in the U.S.
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size
Features
- Enhancement mode transistor-Normally off power switch
- Ultra high switching frequency
- No reverse-recovery charge
- Low gate charge, low output charge
- Qualified for industrial applications according to JEDEC Standards
- ESD safeguard
- RoHS, Pb-free, REACH-compliant
Applications
- AC-DC converters
- DC-DC converters
- BCM/DCM totem pole PFC
- Fast battery charging
- High density power conversion
- High efficiency power conversion
Datasheets