INN650DA600A

Stock Availability: 420

INN650DA600A-B Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN650DA600A
Richardson RFPD #: INN650DA600A-B
Description: GaN Power Transistor
Min/Mult: 1
Datasheet INN650DA600A-B Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm x 6 mm size

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • DCM/BCM PFC
  • AHB/LLC/QR Flyback/ACF DCDC converter
  • LED driver
  • Fast battery charger
  • Standard adaptor

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 5.9
Rds(on) (mΩ) 460
Package Type DFN
Dimensions (mm) 5 mm x 6 mm

Datasheets

  INN650DA600A

Stock

 Ready for Immediate Shipment
Stock: 420 Units

Order

 Pricing in (USD)
Unit Price:
1:  $1.3000
10:  $0.9000
25:  $0.8000
100:  $0.6700
250:  $0.5900
500:  Get Quote