INN700TK600B

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INN700TK600B Innoscience
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Innoscience
Mfg #: INN700TK600B
Richardson RFPD #: INN700TK600B
Description: GaN Power Transistor
Min/Mult: 2,500/1
Datasheet INN700TK600B Data Sheet
EDA/CAD Models

Currently not available for sale in the U.S.

700V GaN-on-Silicon Enhancement-mode Power Transistor in TO-252 package

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • DCM/BCM PFC
  • AHB/LLC/QR Flyback/ACF DC DC Converter
  • LED Driver
  • Fast battery charger
  • Standard adaptor

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 3.3
Rds(on) (mΩ) 460
Package Type TO-252
Dimensions (mm) 6.33 mm x 10.88 mm

Datasheets

  INN700TK600B

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2500:  $0.2700
10000:  Get Quote


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