Currently not available for sale in the U.S.
Single-Channel GaN Driver
The INS1001 is designed to drive single-channel GaN
FET(s) in either low-side, high-side, or secondary-side
SR applications. It has both non-inverting and inverting
PWM inputs, working with controller, opto-coupler, and
digital isolator flexibly. The gate driver has two separate
outputs, allowing independent adjustment of turn-on
and turn-off speeds. The driver voltage can be adjusted
through an external resistor divider, tailoring for
different gate voltage requirements of GaN FETs.
Integrated 5V LDO can supply digital isolator or other
circuitry in high-side applications. The strong driving
capability and fast propagation delay, along with input
noise deglitching and built-in UVLO, OVP, OTP
protection features, make the INS1001 extremely
suitable for high power, high frequency, and robust
power GaN applications. The INS1001 is available in
thermally enhanced DFN3x3-10L package.
Features
- Wide 6V to 20V Operating Voltage Range
- Dual Inverting and Non-Inverting PWM Inputs
- Independent Pullup and Pulldown Outputs for Adjustable Turn-on and Turn-off Speeds
- Strong 1.3-Ohm Pullup and 0.5-Ohm Pulldown Resistance
- Fast Propagation Delay with Input Deglitching
- User Programmable Gate Driver Supply Voltage
- Integrated 5V LDO for supplying Digital Isolator
- Built-In UVLO, OVP, OTP Protection
Applications
- Switch-Mode Power Supplies
- AC-DC, DC-DC Converters
- Boost, Flyback, and Forward Converters
- Half-Bridge and Full-Bridge Converters
- Synchronous Rectification
- Solar Inverters, Motor Control, UPS
