MA4PBL027

Single Diode Configuration: This device is a Silicon-Glass Beam-Lead PIN diode fabricated with MACOM's patented HMIC™ process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the air-bridges during handling and assembly. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The +10 mA (low loss state) and the 0V (isolation state) bias of the diodes allows the use a simple + 5V TTL gate driver. These diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.