Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in high incident power, 40dBm C.W., or 50dBm,10µS, 1% duty cycle, peak power applications, when used as series, shunt, or series-shunt switches. Smaller parasitic inductance, <0.2nH, and excellent RC time constant, <.3pS make these devices ideally suited for higher frequency switch elements compared to their plastic device counterparts.
