The MADZ-011001 is a terahertz cutoff frequency,
gallium arsenide flip chip Schottky barrier diode. This
diode is fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. This device is fully
passivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junction
during automated or manual handling. The flip chip
configuration is suitable for pick and place insertion.
The high cutoff frequency of this diode allows use
through W band and higher frequencies. Typical
applications include single and double balanced
mixers in radar transceivers, communications
transceivers, test and measurement equipment, etc.
