The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.
