MAGX-100027-100C0P


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAGX-100027-100C0P
Richardson RFPD #: MAGX-100027-100
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet MAGX-100027-100 Data Sheet
EDA/CAD Models

The MAGX-100027-100C0P is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package.

The MAGX-100027-100C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2700
Pout (W) 100
Gain (dB) 17.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 67
P1dB (W)
Psat (W) 100
Thermal Resistance (°C/W) 1.56
Package Name TO-272S-2
Package Type Plastic Flangeless

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25:  $117.2500
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