MAPC-A1100-AS000

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MAPC-A1100-AS00 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAPC-A1100-AS000
Richardson RFPD #: MAPC-A1100-AS00
Description: RF Power Transistor
Min/Mult: 1
Datasheet MAPC-A1100-AS00 Data Sheet
EDA/CAD Models

The MAPC-A1100 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3.5 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 65 W (48.1 dBm) in an air cavity ceramic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 3500
Pout (W) 65
Gain (dB) 17.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70.5
P1dB (W)
Psat (W) 41.69
Thermal Resistance (°C/W) 4.6
Package Name AC-360S-2
Package Type Ceramic Flangeless

Datasheets

  MAPC-A1100

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Mfg. Stock: 140 Units

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