MAPC-A1103-AS000


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAPC-A1103-AS000
Richardson RFPD #: MAPC-A1103-AS00
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet MAPC-A1103-AS00 Data Sheet
EDA/CAD Models

The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2700
Pout (W) 270
Gain (dB) 16.1
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 68.2
P1dB (W)
Psat (W) 223.8
Thermal Resistance (°C/W) 1.16
Package Name AC-650S-4
Package Type Ceramic Flangeless

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