MAPC-A1103-ASTR1

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MAPC-A1103-ASTR1 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: MAPC-A1103-ASTR1
Richardson RFPD #: MAPC-A1103-ASTR1
Description: RF Power Transistor
Min/Mult: 250/250
Datasheet MAPC-A1103-ASTR1 Data Sheet
EDA/CAD Models

The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 270 W (54.3 dBm) in an air cavity ceramic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2700
Pout (W) 270
Gain (dB) 16.1
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 68.2
P1dB (W)
Psat (W) 223.8
Thermal Resistance (°C/W) 1.16
Package Name AC-650S-4
Package Type Ceramic Flangeless

Change Notice

  MACOM_PCN-01575

Datasheets

  MAPC-A1103-AS00

Stock

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Unit Price: Pricing in (USD)
250:  $404.9300

Must order in multiple of 250

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