MD8IC925NR1

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MD8IC925NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MD8IC925NR1
Richardson RFPD #: MD8IC925NR1
Description: RF & MW Power Amplifier
Min/Mult: 500/1
Datasheet MD8IC925NR1 Data Sheet
EDA/CAD Models

RF LDMOS Wideband Integrated Power Amplifier. The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 728
Maximum Frequency (MHz) 960
Gain (dB) 36.2
Gain Flatness (dB) 0.2
Efficiency (%) 17.5
Supply Voltage (V) 28
P1dB (dBm) 44.15
Psat (W)
PAvg (W)
Package Type Plastic

Change Notice

  NXP_PCN_202504007I

Datasheets

  MD8IC925N

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1:  $137.7100


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