MDSGN-750ELMV


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MDSGN-750ELMV
Richardson RFPD #: MDSGN-750ELMV
Description: RF Power Transistor
Min/Mult: 1
Datasheet MDSGN-750ELMV Data Sheet
EDA/CAD Models

The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at ELM pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for Mode-S ELM Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1030
Maximum Frequency (MHz) 1090
Pout (W) 750
Gain (dB) 19
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 6
Efficiency (%) 70
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.24
Package Name 55KR
Package Type Ceramic Flanged

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