MMA042AA
Stock Availability: 0
| Manufacturer: | Microchip |
|---|---|
| Mfg #: | MMA042AA |
| Richardson RFPD #: | MMA042AA |
| Description: | RF & MW LNA |
| Min/Mult: | 50/1 |
| Datasheet |
MMA042AA |
| EDA/CAD Models |
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MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs).
Applications- Test and measurement instrumentation
- Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures (ECCM)
- Military and space
- Telecom infrastructure
- Wideband microwave radios
- Microwave and millimeter-wave communication systems
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