MMA042AA


Stock Availability: 0

Manufacturer: Microchip
Mfg #: MMA042AA
Richardson RFPD #: MMA042AA
Description: RF & MW LNA
Min/Mult: 50/1
Datasheet MMA042AA Data Sheet
EDA/CAD Models

MMA042AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042AA amplifier features RF I/Os that are internally matched to 50 Ohm, which allows for easy integration into multi-chip modules (MCMs).

Applications
  • Test and measurement instrumentation
  • Electronic warfare (EW), electronic counter measures (ECM), and electronic counter-counter measures (ECCM)
  • Military and space
  • Telecom infrastructure
  • Wideband microwave radios
  • Microwave and millimeter-wave communication systems

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 2000
Maximum Frequency (MHz) 26000
Gain (dB) 18.5
Gain Flatness (dB) 0.5
Noise Figure (dB) 2.5
P1dB (dBm) 20
Output IP3 (dBm) 30
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 6
Current (mA) 120
Package Type Die

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Pricing in (USD)

Unit Price:
50:  $117.5300
100:  $114.4700
500:  $111.5800


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